CPC5602C View Datasheet(PDF) - Clare Inc => IXYS
Part Name
Description
MFG CO.
'CPC5602C' PDF : 4 Pages View PDF
Parameter
Drain-to-Source Voltage - VDS
Max On-Resistance - RDS(on)
Max Power
Rating
350
14
2.5
Units
V
W
Features
• 350V Drain-to-Source Voltage
• Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures
• Low On-resistance: 8 (Typical) @ 25°C
• Low VGS(off) Voltage: -2.0V to -3.6V
• High Input Impedance
• Low Input and Output Leakage
• Small Package Size SOT-223
• PC Card (PCMCIA) Compatible
• PCB Space and Cost Savings
Applications
• Support Component for LITELINK™
Data Access Arrangement (DAA)
• Telecommunications
• Normally On Switches
• Ignition Modules
• Converters
• Security
• Power Supplies
CPC5602
N-Channel Depletion Mode FET
Description
The CPC5602 is an N-channel depletion mode Field
Effect Transistor (FET) that utilizes Clare’s proprietary
third generation vertical DMOS process. The third
generation process realizes world class, high voltage
MOSFET performance in an economical silicon gate
process. The vertical DMOS process yields a highly
reliable device, particularly in difficult application
environments such as telecommunications, security,
and power supplies.
One of the primary applications for the CPC5602 is
as a linear regulator/hook switch for the LITELINK
family of Data Access Arrangements (DAA) Devices
CPC5620A, CPC5621A, and CPC5622A.
The CPC5602 has a typical on-resistance of 8, a
drain-to-source voltage of 350V, and is available in an
SOT-223 package. As with all MOS devices, the FET
structure prevents thermal runaway and
thermal-induced secondary breakdown.
Ordering Information
Part Number
CPC5602C
CPC5602CTR
Description
N-Channel Depletion Mode FET, SOT-223 Pkg.
Cut-Tape, Available in Quantities of 200, 300,
400, 500, and 600
N-Channel Depletion Mode FET, SOT-223 Pkg.
Tape and Reel (1000/reel)
Pb
RoHS
2002/95/EC
DS-CPC5602-R07
e3
Package Pinout
D
4
123
GDS
Pin Number
1
2
3
4
Name
GATE
DRAIN
SOURCE
DRAIN
www.clare.com
1
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