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CS8312YN8 View Datasheet(PDF) - ON Semiconductor

Part Name
Description
MFG CO.
'CS8312YN8' PDF : 8 Pages View PDF
1 2 3 4 5 6 7 8
CS8312
ABSOLUTE MAXIMUM RATINGS*
Rating
Supply Voltage
Digital Input Currents
Internal Power Dissipation (TA = 25°C)
Junction Temperature Range
Storage Temperature Range
Electrostatic Discharge (Human Body Model)
Lead Temperature Soldering
Wave Solder (through hole styles only) Note 1.
Reflow (SMD styles only) Note 2.
1. 10 seconds max.
2. 60 seconds max above 183°C
*The maximum package power dissipation must be observed.
Value
–0.3 to 12
2.0
700
–40 to +150
–55 to +165
2.0
260 peak
230 peak
ELECTRICAL CHARACTERISTICS (7.0 V VCC 10 V, –40°C TA 125°C,
–0.2 V Differential Ground Voltage 0.8 V; unless otherwise specified.)
Characteristic
Test Conditions
Min
General
Power Supply Including Ripple Voltage
7.0
Supply Ripple Frequency
10
Differential Ground Frequency
10
Quiescent Current, IQ
Turn On
VCTRL = 5.5 V
Turn Off
VCTRL = –0.3 V
Supply Voltage Rejection
VCTRL = 5.5 V
30
Differential Ground Rejection Ratio
VCTRL = 5.5 V
30
Differential Ground Current Ratio
VCTRL = –0.3 V,
(VSENSE– – VGND)DC = 1.0 V
(VSENSE– – VGND)AC = 0.6 V
Unity Gain Bandwidth
VCTRL = 5.5 V
400
Turn On Delay
CTRL Increasing
Turn Off Delay
CTRL Decreasing
Control Function
Input Voltage Range
ICTRL = 2.0 mA
–0.3
Input Threshold
Turn On
CTRL Increasing
Turn Off
CTRL Decreasing
1.5
Hysteresis
0.4
Voltage
ICTRL = 10 µA max
Input Capacitance
Current Limit Increase Function
Input Voltage Range
ICTRL = 2.0 mA
–0.3
Input Threshold
Turn On
CLI Increasing
Turn Off
CLI Decreasing
1.5
Hysteresis
0.4
Voltage
ICLI = 10 µA max
Typ
Max
10
60
60
15
5.0
3.0
30
30
5.5
3.5
2.0
1.1
50
5.5
3.5
2.0
1.1
http://onsemi.com
2
Unit
V
mA
mW
°C
°C
kV
°C
°C
Unit
V
kHz
kHz
mA
mA
dB
dB
mA
kHz
µs
µs
V
V
V
V
V
pF
V
V
V
V
V
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