CSC1162C View Datasheet(PDF) - Continental Device India Limited
Part Name
Description
MFG CO.
'CSC1162C' PDF : 3 Pages View PDF
CSC1162
Emitter-base voltage (open collector)
Collector current
Collector current (Peak)
Total power dissipation up to TA = 25 C
Total power dissipation up to TC = 25 C
Junction temperature
Storage temperature
CHARACTERISTICS
Tamb = 25 C unless otherwise specified
Collector cutoff current
IE = 0; VCB = 35V
Breakdown voltages
IC = 10 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltage
IC = 2 A; IB = 0.2 A
Base-emitter on voltage
IC = 1.5A; VCE = 2V (Pulse)
D.C. current gain
IC = 0.5 A; VCE = 2 V**
IC = 1.5 A; VCE = 2 V (Pulse)
Transition frequency
IC = 0.2 A; VCE = 2 V
VEBO
IC
IC
Ptot
Ptot
Tj
Tstg
max. 5.0 V
max. 2.5 A
max. 3.0 A
max. 0.75 W
max.
10 W
max. 150 ÀC
65 to +150 ÀC
ICBO
VCEO
VCBO
VEBO
VCEsat*
VBE(on)
hFE
hFE
fT
max.
min.
min.
min.
max.
max.
min.
max.
min.
typ.
20 øA
35 V
35 V
5V
1.0 V
1.5 V
60
320
20
180 MHz
** hFE classification: B: 60-120 C: 100-200 D: 160-320
Continental Device India Limited
Data Sheet
Page 2 of 3
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