CSA940, CSC2073
Collector current
Base current
Total power dissipation up to TC = 25°C
Total power dissipation up to TA = 25°C
Junction temperature
Storage temperature
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IE = 0; VCB = 120 V
Emitter cut-off current
IC = 0; VEB = 5 V
Breakdown voltages
IC = 1 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltages
IC = 500 mA; IB = 50 mA
Base emitter on voltage
IC = 500 mA; VCE = 10 V
D.C. current gain
IC = 500 mA; VCE = 10 V
Output capacitance at f = 1 MHz
IE = 0; VCB = 10 V NPN
PNP
Transition frequency
IC = 500 mA; VCE = 10 V
IC
max.
1.5 A
IB
max.
0.5 A
Ptot
max.
25 W
Ptot
max.
1.5 W
Tj
max. 150 ºC
Tstg
–65 to +150 ºC
ICBO
IEBO
VCEO
VCBO
VEBO
VCEsat
VBE(on)
hFE
Co
fT
max.
max.
min.
min.
min.
max.
min.
max.
min.
max.
typ.
typ.
typ.
10 µA
10 µA
150 V
150 V
5.0 V
1.5 V
0.65 V
0.85 V
40
140
35 pF
55 pF
4 MHz
Continental Device India Limited
Data Sheet
Page 2 of 3