CY7C1018V33
CY7C1019V33
Data Retention Characteristics Over the Operating Range (L Version Only)
Parameter
Description
VDR
ICCDR
tCDR[3]
tR
VCC for Data Retention
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
Conditions
No input may exceed VCC + 0.5V
VCC = VDR = 2.0V,
CE > VCC – 0.3V,
VIN > VCC – 0.3V or VIN < 0.3V
Min.
2.0
0
tRC
Data Retention Waveform
DATA RETENTION MODE
VCC
3.0V
VDR > 2V
3.0V
tCDR
tR
CE
Max Unit
V
150 µA
ns
ns
1019V33–5
Switching Waveforms
Read Cycle No. 1[9, 10]
tRC
ADDRESS
DATA OUT
tAA
tOHA
PREVIOUS DATA VALID
Read Cycle No. 2 (OE Controlled)[10, 11]
DATA VALID
1019V33–6
ADDRESS
CE
OE
DATA OUT
VCC
SUPPLY
CURRENT
tRC
tACE
tDOE
tLZOE
HIGH IMPEDANCE
tLZCE
tPU
50%
Notes:
9. Device is continuously selected. OE, CE = VIL.
10. WE is HIGH for read cycle.
11. Address valid prior to or coincident with CE transition LOW.
DATA VALID
tHZOE
tHZCE
HIGH
IMPEDANCE
tPD
50%
ICC
ISB
1019V33–7
Document #: 38-05150 Rev. **
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