CY7C10191B View Datasheet(PDF) - Cypress Semiconductor
Part Name
Description
MFG CO.
'CY7C10191B' PDF : 9 Pages View PDF
CY7C1019B/
CY7C10191B
Data Retention Characteristics Over the Operating Range (L Version Only)
Parameter
Description
VDR
ICCDR
tCDR[3]
tR
VCC for Data Retention
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
Conditions
No input may exceed VCC + 0.5V
VCC = VDR = 2.0V,
CE > VCC – 0.3V,
VIN > VCC – 0.3V or VIN < 0.3V
Min. Max. Unit
2.0
V
300 µA
0
ns
200
µs
Data Retention Waveform
VCC
CE
3.0V
tCDR
DATA RETENTION MODE
VDR > 2V
3.0V
tR
Switching Waveforms
Read Cycle No. 1[9, 10]
tRC
ADDRESS
DATA OUT
tAA
tOHA
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2 (OE Controlled)[10, 11]
ADDRESS
CE
OE
DATA OUT
VCC
SUPPLY
CURRENT
tRC
tACE
tDOE
tLZOE
HIGH IMPEDANCE
tLZCE
tPU
50%
Notes:
9. Device is continuously selected. OE, CE = VIL.
10. WE is HIGH for read cycle.
11. Address valid prior to or coincident with CE transition LOW.
Document #: 38-05026 Rev. *A
DATA VALID
tHZOE
tHZCE
HIGH
IMPEDANCE
tPD
ICC
50%
ISB
Page 4 of 9
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