D1550 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
MFG CO.
'D1550' PDF : 3 Pages View PDF
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A , IB=0
VCEsat Collector-emitter saturation voltage IC=8A ;IB=1.6A
VBEsat Base-emitter saturation voltage
IC=8A ;IB=1.6A
ICBO
Collector cut-off current
VCB=800V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=8A ; VCE=5V
Product Specification
2SD1550
MIN TYP. MAX UNIT
400
V
5.0
V
1.5
V
10 μA
10 μA
8
5
2
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