SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1551
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A , IB=0
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
ICBO
Collector cut-off current
VCB=800V; IE=0
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition frequency
COB
Collector output capacitance
VEB=5V; IC=0
IC=1A ; VCE=5V
IC=0.1A ; VCE=10V
IE=0 ; VCB=10V;f=1MHz
MIN TYP. MAX UNIT
600
V
5.0
V
1.5
V
10
µA
10
µA
8
3
MHz
165
pF
2