D1559 View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

MFG CO.

D1559

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

1 2 3 4 5 6

2SD1559

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Base current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

I C(peak)

IB

PC * 1

Tj

Tstg

Ratings

Unit

100

V

100

V

7

V

20

A

30

A

3

A

100

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 100 —

voltage

Collector to emitter breakdown V(BR)CEO 100 —

voltage

Collector to emitter sustain

voltage

VCEO(sus)

100

—

Emitter to base breakdown

V(BR)EBO

7

—

voltage

Collector cutoff current

DC current transfer ratio

Collector to emitter saturation

voltage

I CBO

I CEO

hFE

VCE(sat)1

—

—

—

—

1000 —

—

—

Base to emitter saturatiopn

VBE(sat)1

—

—

voltage

Collector to emitter saturation VCE(sat)2 —

—

voltage

Base to emitter saturation

VBE(sat)2

—

—

voltage

Turn on time

Storage time

Fall time

Note: 1. Pulse test.

t on

—

1.0

t stg

—

9.0

tf

—

3.0

Max Unit

—

V

—

V

—

V

—

V

100 µA

1.0 mA

20000

2.0 V

2.5 V

3.0 V

3.5 V

—

µs

—

µs

—

µs

Test conditions

IC = 0.1 mA, IE = 0

IC = 25 mA, RBE = ∞

IC = 200 mA, RBE = ∞*1

VEB = 50 mA, IC = 0

VCB = 100 V, IE = 0

VCE = 80 V, RBE = ∞

VCE = 3 V, IC = 10 A*1

IC = 10 A, IB = 20 mA*1

IC = 20 A, IB = 200 mA*1

IC = 10 A, IB1 = –IB2 = 20 mA

2

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