D1559 View Datasheet(PDF) - SavantIC Semiconductor

Part Name

Description

MFG CO.

D1559

Silicon NPN Power Transistors

SavantIC Semiconductor  

1 2 3

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1559

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=25mA ,RBE==

V(BR)CBO Collector-base breakdown voltage

IC=0.1mA ,IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=50mA ,IC=0

VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=20mA

VCEsat -2 Collector-emitter saturation voltage IC=20A; IB=200mA

VBE sat-1 Base-emitter saturation voltage

IC=10A; IB=20mA

VBE sat-2 Base-emitter saturation voltage

IC=20A; IB=200mA

ICBO

Collector cut-off current

VCB=100V; IE=0

ICEO

Collector cut-off current

VCE=80V; RBE==

hFE

DC current gain

IC=10A ; VCE=3V

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=10A; IB1=-IB2=20mA

MIN TYP. MAX UNIT

100

V

100

V

7

V

2.0

V

3.0

V

2.5

V

3.5

V

100

µA

1.0

mA

1000

20000

1.0

µs

9.0

µs

3.0

µs

2

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