D2101 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

MFG CO.

D2101

Silicon NPN Power Transistors

Inchange Semiconductor 

1 2 3

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-base breakdown voltage

IE=50mA; IC=0

V(BR)CBO Collector-base breakdown voltage

IC=0.1mA; IC=0

V(BR)CEO Collector-emitter breakdown voltage IC=25mA;RBE=∞

VCEO(SUS) Collector-emitter sustaining voltage IC=5A; L=5mH

VCE(sat-1) Collector-emitter saturation voltage IC=5A ;IB=10mA

VCE(sat)-2 Collector-emitter saturation voltage IC=10A ;IB=100mA

VBE(sat-1) Base-emitter saturation voltage

IC=5A ;IB=10mA

VBE(sat-2) Base-emitter saturation voltage

IC=10A ;IB=100mA

ICBO

Collector cut-off current

ICEO

Collector cut-off current

VCB=180V; IE=0

VCE=180V; RBE=∞

hFE

DC current gain

IC=5A ; VCE=3V

Product Specification

2SD2101

MIN TYP. MAX UNIT

7

V

200

V

200

V

170

V

1.5

V

3.0

V

2.0

V

3.5

V

10

μA

50

μA

1500

2

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