D2101 View Datasheet(PDF) - Quanzhou Jinmei Electronic
Part Name
Description
MFG CO.
'D2101' PDF : 3 Pages View PDF
Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2SD2101
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VEBO
Base-emitter voltage
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VCEO(sus) Base-emitter voltage
VCE(sat)1 Collector-emitter saturation voltage
VCE(sat)2 Collector-emitter saturation voltage
VBE(sat)1 Base-emitter saturation voltage
VBE(sat)2 Base-emitter saturation voltage
ICBO
Collector cut-off current
ICEO
Collector cut-off current
hFE
DC current gain
CONDITIONS
IE=50mA; IC=0
IC=0.1mA; IC=0
IC=25mA;RBE=∞
IC=5A; L=5mH
IC=5A ;IB=10mA
IC=10A ;IB=100mA
IC=5A ;IB=10mA
IC=10A ;IB=100mA
VCB=180V; IE=0
VCE=180V; RBE=∞
IC=5A ; VCE=3V
MIN
7
200
200
170
1500
TYP.
MAX
1.5
3.0
2.0
3.5
10
50
UNIT
V
V
V
V
V
V
V
V
μA
μA
JMnic
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