D5028UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS
Drain–Source Breakdown
Voltage
PER SIDE
VGS = 0
ID = 100mA
125
IDSS
Zero Gate Voltage
Drain Current
VDS = 50V
VGS = 0
IGSS
Gate Leakage Current
VGS = 20V
VDS = 0
VGS(th) Gate Threshold Voltage*
ID = 10mA
VDS = VGS
1
gfs
Forward Transconductance*
VDS = 10V
ID = 3A
4.8
Gate Threshold Voltage
VGS(th)match Matching Between Sides
ID = 10mA
VDS = VGS
TOTAL DEVICE
GPS
Common Source Power Gain PO = 300W
13
η
Drain Efficiency
VDS = 50V
IDQ = 1.2A
60
VSWR Load Mismatch Tolerance
f = 175MHz
20:1
Ciss
Coss
Crss
Input Capacitance
VDS = 50V
Output Capacitance
VDS = 50V
Reverse Transfer Capacitance VDS = 50V
PER SIDE
VGS = –5V
VGS = 0
VGS = 0
f = 1MHz
f = 1MHz
f = 1MHz
* Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2%
Typ.
Max. Unit
V
6
mA
1
µA
7
V
mhos
0.1
V
dB
%
—
360 pF
150 pF
9
pF
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 0.4°C / W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3140
Issue 1