D50N03L View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'D50N03L' PDF : 16 Pages View PDF
Electrical characteristics
2
Electrical characteristics
STD50N03L - STD50N03L-1
(TCASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
V(BR)DSS
Drain-source breakdown
voltage
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
RDS(on)
Static drain-source on
resistance
Test conditions
ID = 250µA, VGS= 0
VDS = 30V
VDS = 30V, Tc=125°C
VGS = ±20V
VDS= VGS, ID = 250µA
VGS= 10V, ID= 20A
VGS= 5V, ID= 20A
Min. Typ. Max. Unit
30
V
1
µA
10 µA
±100 nA
1
V
9.2 10.5 mΩ
0.012 0.019 Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
QOSS (1) Output charge
RG Gate input resistance
VDS =25V, f=1MHz,
VGS=0
VDD= 15V, ID = 40A
VGS = 5V
(see Figure 13)
VDS = 24V ; VGS =0
f=1MHz Gate Bias
Bias=0 Test signal
Level=20mV
open drain
1. QOSS=COSS*D Vin; COSS= Cgd + Cgd. See Appendix A
Min. Typ. Max. Unit
1434
pF
294
pF
48
pF
10.4 14 nC
5.1
nC
3.7
nC
12.6
nC
1.1
Ω
4/16
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