D526 View Datasheet(PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
Part Name
Description
MFG CO.
'D526' PDF : 2 Pages View PDF
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2SD526
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VBE(on) Base-Emitter On Voltage
IC= 3A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.5A; VCE= 5V
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE= 5V
MIN TYP. MAX UNIT
80
V
0.45 1.5
V
1.0 1.5
V
30 μA
0.1 mA
40
240
15 50
90
pF
3
8
MHz
hFE-1 Classifications
R
O
Y
40-80 70-140 120-240
SPTECH website：www.superic-tech.com
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