D65NF06 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'D65NF06' PDF : 14 Pages View PDF
STD65NF06 - STP65NF06
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage (VGS = 0)
VGS
Gate- source voltage
ID
Drain current (continuous) at TC = 25°C
ID
IDM(1)
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Ptot
Total dissipation at TC = 25°C
Derating Factor
dv/dt (2) Peak diode recovery voltage slope
EAS (3)
Single pulse avalanche energy
Tstg
Storage temperature
Tj
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD ≤60A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
3. Starting Tj = 25 °C, ID = 30A, VDD = 40V
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Rthj-pcb(1) Thermal resistance junction-pcb max
Tl
Maximum lead temperature for soldering
purpose (for 10sec. 1.6mm from case)
1. When mounted on FR-4 of 1 inch², 2 oz Cu
Value
60
± 20
60
42
240
110
0.73
10
390
-55 to 175
TO-220
DPAK
1.36
62.5
--
--
50
300
--
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Unit
°C/W
°C/W
°C/W
°C/W
3/14
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