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DPF60IM400HB View Datasheet(PDF) - IXYS CORPORATION

Part Name
Description
MFG CO.
DPF60IM400HB
IXYS
IXYS CORPORATION IXYS
'DPF60IM400HB' PDF : 4 Pages View PDF
1 2 3 4
HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DPF 60 IM 400 HB
1
3
DPF 60 IM 400 HB
VRRM =
IFAV =
t rr =
final
400 V
60 A
60 ns
2
Features / Advantages:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Backside: cathode
Package:
Housing: TO-247
rIndustry standard outline
rEpoxy meets UL 94V-0
rRoHS compliant
Symbol
VRRM
IR
VF
IFAV
VF0
rF
R thJC
T VJ
Ptot
I FSM
I RM
t rr
Definition
Conditions
max. repetitive reverse voltage
reverse current
forward voltage
VR =
VR =
IF =
IF =
IF =
IF =
400 V
400 V
60 A
120 A
60 A
120 A
average forward current
rectangular
threshold voltage
slope resistance
for power loss calculation only
d = 0.5
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
t = 10 ms (50 Hz), sine
reverse recovery time
IF = 60 A; VR = 270 V
-diF/dt = 200 A/µs
CJ
junction capacitance
VR = 200 V; f = 1 MHz
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 150°C
TC = 130°C
TVJ = 175°C
TC = 25°C
TVJ = 45°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
Ratings
min. typ. max. Unit
400 V
1 µA
0.5 mA
1.27 V
1.53 V
1.09 V
1.39 V
60 A
0.76 V
4.9 m
0.55 K/W
-55
175 °C
275 W
600 A
6
A
12
A
60
ns
105
ns
61
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20100216a
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