DPG60IM400QB View Datasheet(PDF) - IXYS CORPORATION
Part Name
Description
MFG CO.
'DPG60IM400QB' PDF : 5 Pages View PDF
DPG60IM400QB
Fast Diode
120
100
80
IF
60
[A]
40
TVJ = 150°C
1.0
TVJ = 125°C
VR = 270 V
0.8
Qrr
0.6
[μC]
120 A
60 A
30 A
22
20
18
16
IRM 14
[A] 12
10
IF = 120 A
60 A
30 A
0.4
8
20
25°C
6
TVJ = 125°C
VR = 270 V
0.0 0.4 0.8 1.2 1.6 2.0
0.2
0
200
400
600
4
0
200
400
600
VF [V]
-diF /dt [A/μs]
-diF /dt [A/μs]
Fig. 1 Forward current
Fig. 2 Typ. reverse recov. charge
Fig. 3 Typ. reverse recov. current
IF versus VF
Qrr versus -diF /dt
IRM versus -diF /dt
1.4
1.2
1.0
Kf 0.8
0.6
IRM
0.4
0.2
0
Qrr
40
80 120 160
TVJ [°C]
Fig. 4 Typ. dynamic parameters
Qrr, IRM versus TVJ
110
1200
12
TVJ = 125°C
VR = 270 V
tfr
1100
TVJ = 125°C
VR = 270 V
11
VFR
100
1000
IF = 60 A
10
900
9
90
trr
800
tfr 700
8
VFR
7
[ns] 80
[ns] 600
6 [V]
120 A
70
60 A
30 A
60
0
200
400
600
-diF /dt [A/μs]
Fig. 5 Typ. reverse recov. time
trr versus -diF /dt
500
5
400
4
300
3
200
0
2
200
400
600
-diF /dt [A/μs]
Fig. 6 Typ. forward recovery voltage
VFR & time tfr versus diF /dt
40
TVJ = 125°C
VR = 270 V
30
Erec
20
[μJ]
120 A
60 A
30 A
1.0
ZthJC
[K/W]
10
0
0
200
400
600
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
0.1
100
101
102
103
t [ms]
Fig. 8 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
104
20131101a
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