DS3232SN View Datasheet(PDF) - Maxim Integrated
Part Name
Description
MFG CO.
'DS3232SN' PDF : 18 Pages View PDF
Extremely Accurate I2C RTC with
Integrated Crystal and SRAM
ELECTRICAL CHARACTERISTICS (continued)
(VCC = 2.3V to 5.5V, VCC = active supply (see Table 1), TA = -40°C to +85°C, unless otherwise noted.) (Typical values are at VCC =
3.3V, VBAT = 3.0V, and TA = +25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETER
Logic 0 Output, INT/SQW, SDA
Logic 0 Output, RST, 32kHz
SYMBOL
VOL
VOL
IOL = 3mA
IOL = 1mA
CONDITIONS
MIN TYP MAX UNITS
0.4
V
0.4
V
Output Leakage Current 32kHz,
INT/SQW, SDA
ILO
Output high impedance
-1
0
+1
μA
Input Leakage SCL
RST Pin I/O Leakage
TCXO
Output Frequency
ILI
IOL
RST high impedance (Note 5)
fOUT VCC = 3.3V or VBAT = 3.3V
-1
-200
+1
μA
+10
μA
32.768
kHz
Duty Cycle
(Revision A3 Devices)
2.97V VCC < 3.63
31
69
%
Frequency Stability vs.
Temperature
f/fOUT
VCC = 3.3V or
VBAT = 3.3V
0°C to +40°C
-2
-40°C to 0°C and
+40°C to +85°C
-3.5
+2
+3.5
ppm
Frequency Stability vs. Voltage
f/V
VCC = 3.3V or VBAT = 3.3V
-40°C
1
ppm/V
0.7
Trim Register Frequency
Sensitivity per LSB
Temperature Accuracy
Crystal Aging
f/LSB
Temp
f/f0
Specified at:
+25°C
+70°C
+85°C
VCC = 3.3V or VBAT = 3.3V
After reflow,
not production tested
First year
0–10 years
0.1
ppm
0.4
0.8
-3
+3
°C
±1.0
±5.0
ppm
ELECTRICAL CHARACTERISTICS
(VCC = 0V, VBAT = 2.3V to 5.5V, TA = -40°C to +85°C, unless otherwise noted.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
Active Battery Current
(Note 4)
Timekeeping Battery Current
(Note 4)
IBATA
IBAT
EOSC = 0, BBSQW = 0,
SCL = 400kHz, BB32kHz = 0
EOSC = 0, BBSQW = 0,
SCL = SDA = 0V,
BB32kHz = 0,
CRATE0 = CRATE1 = 0
VBAT = 3.3V
VBAT = 5.5V
VBAT = 3.4V
VBAT = 5.5V
Temperature Conversion Current
Data-Retention Current
ITC
IBATTC
EOSC = 0, BBSQW = 0, SCL = SDA = 0V
EOSC = 1, SCL = SDA = 0V, +25°C
TYP
1.5
1.5
MAX
80
200
2.5
3.0
600
100
UNITS
μA
μA
μA
nA
_____________________________________________________________________ 3
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