External Memory Expansion Port (Port A)
Table 3-12 DRAM Page Mode Timings, Four Wait States1, 2, 3 (continued)
No.
Characteristics
Symbol
Expression4
Min Max Unit
140 Column address valid to CAS assertion
tASC
TC − 4.0
6.0 — ns
141 CAS assertion to column address not valid
tCAH
3.5 × TC − 4.0
31.0 —
ns
142 Last column address valid to RAS deassertion
tRAL
5 × TC − 4.0
46.0 — ns
143 WR deassertion to CAS assertion
tRCS
1.25 × TC − 4.0
8.5
—
ns
144 CAS deassertion to WR assertion
tRCH
1.25 × TC − 4.0
8.5
—
ns
145 CAS assertion to WR deassertion
tWCH
3.25 × TC − 4.2 28.3 —
ns
146 WR assertion pulse width
tWP
4.5 × TC − 4.5
40.5 —
ns
147 Last WR assertion to RAS deassertion
tRWL
4.75 × TC − 4.3 43.2 —
ns
148 WR assertion to CAS deassertion
tCWL
3.75 × TC − 4.3 33.2 —
ns
149 Data valid to CAS assertion (write)
tDS
0.5 × TC − 4.0
1.0 —
ns
150 CAS assertion to data not valid (write)
tDH
3.5 × TC − 4.0
31.0 —
ns
151 WR assertion to CAS assertion
tWCS
1.25 × TC − 4.3
8.2
—
ns
152 Last RD assertion to RAS deassertion
tROH
4.5 × TC − 4.0
41.0 —
ns
153 RD assertion to data valid
154 RD deassertion to data not valid6
tGA
3.25 × TC − 7.0
— 25.5 ns
tGZ
0.0 — ns
155 WR assertion to data active
0.75 × TC − 0.3
7.2
—
ns
156 WR deassertion to data high impedance
0.25 × TC
— 2.5 ns
1 The number of wait states for Page mode access is specified in the DCR.
2 The refresh period is specified in the DCR.
3 The asynchronous delays specified in the expressions are valid for DSP56364.
4 All the timings are calculated for the worst case. Some of the timings are better for specific cases (e.g., tPC equals 3 × TC for
read-after-read or write-after-write sequences).
5 BRW[1:0] (DRAM control register bits) defines the number of wait states that should be inserted in each DRAM out-of-page
access.
6 RD deassertion will always occur after CAS deassertion; therefore, the restricted timing is tOFF and not tGZ.
3-24
DSP56364 Technical Data, Rev. 4.1
Freescale Semiconductor