EDS5116ABTA-6B View Datasheet(PDF) - Elpida Memory, Inc

Part Name

Description

MFG CO.

EDS5116ABTA-6B

512M bits SDRAM / 54-pin TSOP

Elpida Memory, Inc 

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EDS5104ABTA, EDS5108ABTA, EDS5116ABTA

Write command to Precharge command interval (same bank)

When the precharge command is executed for the same bank as the write command that preceded it, the minimum

interval between the two commands is 1 clock. However, if the burst write operation is unfinished, the input data

must be masked by means of DQM for assurance of the clock defined by tDPL.

CLK

Command

WRIT PRE/PALL

DQM

DQ

CLK

Command

DQM

tDPL

WRIT

PRE/PALL

DQ

in A0

in A1

tDPL

WRITE to PRECHARGE Command Interval (same bank) (BL = 4 (To stop write operation))

CLK

Command

DQM

WRIT

PRE/PALL

DQ

in A0

in A1

in A2

in A3

tDPL

WRITE to PRECHARGE Command Interval (same bank) (BL = 4 (To write all data))

Preliminary Data Sheet E0250E10 (Ver. 1.0)

39

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