EGP50C View Datasheet(PDF) - General Semiconductor
Part Name
Description
MFG CO.
'EGP50C' PDF : 2 Pages View PDF
1
2
RATINGS AND CHARACTERISTIC CURVES EGP50A THRU EGP50G
FIG. 1 - MAXIMUM FORWARD CURRENT
DERATING CURVE
6.0
RESISTIVE OR
INDUCTIVE LOAD
5.0
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
175
150
TJ=TJ max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
4.0
COPPER HEATSINKS
3.0
2.0
TL
L
1.0
0.375" (9.5mm)
0
0 25 50 75 100 125 150 175
LEAD TEMPERATURE, °C
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
PULSE WIDTH=300µs
1% DUTY CYCLE
10
TJ=150°C
125
100
75
50
25
0
1
10
100
NUMBER OF CYCLES AT 60 HZ
FIG. 4 - TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
100
TJ=150°C
10
TJ=125°C
1
TJ=25°C
1
TJ=75°C
0.1
0.1
0.01
0.2
EGP50A - EGP50D
EGP50F & EGP50G
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
0.01
TJ=25°C
0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
210
180
150
120
90
60
30
0
0.1
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
TJ=25°C
f=1.0 MHZ
Vsig=50mVp-p
EGP50A-EGP50D
EGP50F & EGP50G
1
10
100
REVERSE VOLTAGE, VOLTS
1,000
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1.10
0.1
0.01
0.1
1
10
100
t, PULSE DURATION, sec.
Share Link: 
