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EMIF01-10005W5 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
MFG CO.
EMIF01-10005W5
ST-Microelectronics
STMicroelectronics ST-Microelectronics
'EMIF01-10005W5' PDF : 10 Pages View PDF
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EMIF01-10005W5
The measurements shown here after illustrate very clearly (Fig. A5a) the high efficiency of the ESD protection :
- no influence of the parasitic inductances on Vout stage
- Vout clamping voltage very close to VBR
Fig A5 : Remaining voltage at both stages S1 (Vin) and S2 (Vout) during ESD surge
a) Positive surge
b) Negative surge
Please note that the EMIF01-10005W5 is not only acting
for positive ESD surges but also for negative ones. For
these kind of disturbances it clamps close to ground
voltage as shown in Fig. A5b.
NOTE: DYNAMIC RESISTANCE MEASUREMENT
Fig A6 : Rd measurement current wave
I
IPP
As the value of the dynamic resistance remains stable for
a surge duration lower than 20µs, the 2.5µs rectangular
surge is well adapted. In addition both rise and fall times
are optimized to avoid any parasitic phenomenon during
the measurement of Rd.
t
2 µs
2.5 µs
2.5µs duration measurement wave
5/10
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