ES3DB View Datasheet(PDF) - LiteOn Technology
Part Name
Description
MFG CO.
'ES3DB' PDF : 2 Pages View PDF
1
2
LITE-ON
SEMICONDUCTOR
SURFACE MOUNT
SUPER FAST RECTIFIERS
ES3AB thru ES3JB
REVERSE VOLTAGE - 50 to 400 Volts
FORWARD CURRENT - 3.0 Amperes
FEATURES
Glass passivated chip
Super fast switching for high efficiency
For surface mounted applications
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material has UL flammability classification 94V-0
MECHANICAL DATA
Case : Molded plastic
Polarity : Color band denotes cathode
Weight : 0.003 ounces, 0.093 grams
SMB
SMB
A
DIM. MIN. MAX.
A
4.06 4.57
B
B
3.30 3.94
C
C
1.96 2.21
D
0.15 0.31
E
5.21 5.59
G
H
F
D
E
F
0.05 0.20
G
2.01 2.50
H
0.76 1.52
All Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
SYMBOL ES3AB ES3BB ES3CB ES3DB ES3GB ES3JB UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
150
200
400
600
V
Maximum RMS Voltage
VRMS
35
70
105
140
280
420
V
Maximum DC Blocking Voltage
VDC
50
Maximum Average Forward
Rectified Current
@TL =110 C
I(AV)
Peak Forward Surge Current
8.3ms single half sine-wave
IFSM
super imposed on rated load (JEDEC METHOD)
Maximum forward Voltage at 3.0A DC
VF
Maximum DC Reverse Current @TJ =25 C
at Rated DC Blocking Voltage @TJ=125 C
IR
Maximum Reverse Recovery Time (Note 1)
TRR
100
150
200
3.0
100
0.92
10
500
25
400
1.25
600
V
A
A
1.30
V
uA
35
ns
Typical Reverse Recovery Time
TRR
20
30
ns
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance
Operating Temperature Range
CJ
Rθ JA
Rθ JL
Rθ JC
TJ
45
pF
50
15
C/W
15
-55 to + 150
C
Storage Temperature Range
TSTG
NOTES : 1. Reverse Recovery Test Conditions :IF=0.5A,IR=1.0A,IRR=0.25A.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
-55 to + 150
C
REV. 5, Apr-2010, KSGB02
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