FDFM2P110 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
MFG CO.
'FDFM2P110' PDF : 7 Pages View PDF
Typical Characteristics
5
ID = -3.5A
4
3
VDS = -5V
-10V
-15V
2
1
0
0
1
2
3
4
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
500
400
Ciss
300
f = 1MHz
VGS = 0 V
200
Coss
100
Crss
0
0
4
8
12
16
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics
10
TJ = 125oC
1
0.1
TJ = 25oC
0.01
0.001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF, FORWARD VOLTAGE (V)
Figure 9. Schottky Diode Forward Voltage
0.1
0.01
TJ = 125oC
0.001
0.0001
0.00001
TJ = 100oC
TJ = 25oC
0.000001
0
5
10
15
20
VR, REVERSE VOLTAGE (V)
Figure 10. Schottky Diode Reverse Current
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
5
FDFM2P110 Rev. C4 (W)
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