FDH45N50F View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
MFG CO.
'FDH45N50F' PDF : 7 Pages View PDF
Typical Performance Characteristics
Figure 1. On-Region Characteristics
102 Top :
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
101
100
10-1
Notes :
1. 250μs Pulse Test
2. T = 25oC
C
100
101
V , Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.30
0.25
0.20
V = 10V
GS
0.15
0.10
0.05
0.00
0
V = 20V
GS
Note : T = 25oC
J
20
40
60
80
100
120
140
160
I , Drain Current [A]
D
Figure 5. Capacitance Characteristics
12000
10000
C
oss
8000
C
iss
6000
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
4000
C
rss
2000
Note :
1. V = 0 V
GS
2. f = 1 MHz
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 2. Transfer Characteristics
102
150oC
101
25oC
-55oC
100
2
Notes :
1. V = 40V
DS
2. 250μs Pulse Test
4
6
8
10
12
V , Gate-Source Voltage [V]
GS
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
102
101
150oC
25oC
Notes :
1. V = 0V
GS
2. 250μs Pulse Test
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V , Source-Drain voltage [V]
SD
Figure 6. Gate Charge Characteristics
12
VDS = 100V
10
VDS = 250V
VDS = 400V
8
6
4
2
Note : ID = 48A
0
0
20
40
60
80
100
120
QG, Total Gate Charge [nC]
3
www.fairchildsemi.com
FDH45N50F Rev. B
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