FQP70N10 View Datasheet(PDF) - Thinki Semiconductor Co., Ltd.
Part Name
Description
MFG CO.
'FQP70N10' PDF : 7 Pages View PDF
FQP70N10
Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Notes :
1. VGS = 0 V
2. ID = 250 μA
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
103
Operation in This Area
is Limited by R
DS(on)
102
10 µs
100 µs
1 ms
10 ms
DC
101
100
10-1
100
※ Notes :
1. T = 25 oC
C
2. T = 175 oC
J
3. Single Pulse
101
102
V , Drain-Source Voltage [V]
DS
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 35 A
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 8. On-Resistance Variation
vs. Temperature
60
50
40
30
20
10
0
25
50
75
100
125
150
175
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
100
D = 0.5
1 0 -1
0 .2
0 .1
0 .05
0 .02
0 .01
1 0 -2
sin g le p u lse
※ N otes :
1.
Z
θ
(t)
JC
=
0.9 4
℃ /W
M ax.
2. D uty F a ctor, D =t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Z
θ
(t)
JC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t , S q u a re W a ve P u lse D u ra tio n [se c]
1
Figure 11. Transient Thermal Response Curve
Rev.09T
© 1995 Thinki Semiconductor Co., Ltd.
Page 4/7
http://www.thinkisemi.com.tw/
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