FZ1200R17KF6B2 View Datasheet(PDF) - eupec GmbH
Part Name
Description
MFG CO.
'FZ1200R17KF6B2' PDF : 8 Pages View PDF
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 17 KF6 B2
Charakteristische Werte / Characteristic values
Transistor / Transistor
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Modulinduktivität
stray inductance module
IC = 1200A, V CE = 900V
VGE = ±15V, RG = 1,2Ω, Tvj = 25°C
VGE = ±15V, RG = 1,2Ω, Tvj = 125°C
IC = 1200A, V CE = 900V
VGE = ±15V, RG = 1,2Ω, Tvj = 25°C
VGE = ±15V, RG = 1,2Ω, Tvj = 125°C
IC = 1200A, V CE = 900V
VGE = ±15V, RG = 1,2Ω, Tvj = 25°C
VGE = ±15V, RG = 1,2Ω, Tvj = 125°C
IC = 1200A, V CE = 900V
VGE = ±15V, RG = 1,2Ω, Tvj = 25°C
VGE = ±15V, RG = 1,2Ω, Tvj = 125°C
IC = 1200A, V CE = 900V, VGE = 15V
RG = 1,2Ω, Tvj = 125°C, LS = 50nH
IC = 1200A, V CE = 900V, VGE = 15V
RG = 1,2Ω, Tvj = 125°C, LS = 50nH
tP ≤ 10µsec, VGE ≤ 15V
TVj≤125°C, VCC=1000V, VCEmax=VCES -LsCE ·dI/dt
Modulleitungswiderstand, Anschlüsse - Chip
module lead resistance, terminals - chip
pro Zweig / per arm
min. typ. max.
td,on
0,3
µs
0,3
µs
tr
0,16
µs
0,16
µs
td,off
1,1
µs
1,1
µs
tf
0,13
µs
0,14
µs
Eon
Eoff
ISC
LsCE
RCC´+EE´
330
480
4800
12
0,08
mWs
mWs
A
nH
mΩ
Charakteristische Werte / Characteristic values
Diode / Diode
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
IF = 1200A, V GE = 0V, Tvj = 25°C
IF = 1200A, V GE = 0V, Tvj = 125°C
IF = 1200A, - diF/dt = 7200A/µsec
VR = 900V, VGE = -10V, T vj = 25°C
VR = 900V, VGE = -10V, T vj = 125°C
IF = 1200A, - diF/dt = 7200A/µsec
VR = 900V, VGE = -10V, T vj = 25°C
VR = 900V, VGE = -10V, T vj = 125°C
IF = 1200A, - diF/dt = 7200A/µsec
VR = 900V, VGE = -10V, T vj = 25°C
VR = 900V, VGE = -10V, T vj = 125°C
min. typ. max.
VF
2,1
2,5
V
1,95 2,3
V
IRM
700
A
1000
A
Qr
160
µAs
350
µAs
Erec
90
mWs
180
mWs
2(8)
FZ1200R17KF6B2
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