GB7NB60FD View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'GB7NB60FD' PDF : 11 Pages View PDF
STGP7NB60FD - STGB7NB60FD
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCES
VGE
IC
IC
ICM ( )
Collector-Emitter Voltage (VGS = 0)
Gate-Emitter Voltage
Collector Current (continuous) at TC = 25°C
Collector Current (continuous) at TC = 100°C
Collector Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
( ) Pulse width limited by safe operating area
Value
600
±20
14
7
56
80
0.64
– 55 to 150
150
Unit
V
V
A
A
A
W
W/°C
°C
°C
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
1.56
°C/W
62.5
°C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
VBR(CES) Collector-Emitter Breakdown IC = 250 µA, VGE = 0
600
V
Voltage
ICES
Collector cut-off
(VGE = 0)
VCE = Max Rating, TC = 25 °C
VCE = Max Rating, TC = 125 °C
50
µA
100
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20V , VCE = 0
±100
nA
ON (1)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
VGE(th) Gate Threshold Voltage
VCE = VGE, IC = 250 µA
3
5
V
VCE(sat) Collector-Emitter Saturation
Voltage
VGE = 15V, IC = 7 A
VGE = 15V, IC= 7 A, Tj =125°C
2.0
2.4
V
1.6
V
2/11
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