GLT4160L04-50TC View Datasheet(PDF) - G-Link Technology
Part Name
Description
MFG CO.
'GLT4160L04-50TC' PDF : 22 Pages View PDF
G-LINK
GLT4160L04
4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
Nov 2001 (Rev.3.2)
40
50
60
70
Parameter
Symbol Min. Max. Min. Max. Min. Max. Min. Max. Unit Notes
CAS Hold Time for CAS -before- RAS Cycle
WE to RAS precharge time ( CAS Before RAS
refresh )
WE to RAS hold time ( CAS Before RAS
refresh )
Transition Time
tCHR
tWRP
tWRH
tT
8
10
10
15
ns
10
10
10
10
ns
10
10
10
10
ns
2 50 2 50 2 50 2 50 ns 11
Refresh Period (2,048 cycles)
tREF
32
32
32
32 ms
Refresh Period (S-Version)
tREF
128
128
128
128 ms
RAS Pulse Width ( CAS Before RAS Self refresh tRASS 100
100
100
100
µs
)
RAS precharge Time ( CAS Before RAS Self
tRPS
70
90
110
130
ns
refresh )
CAS Hold Time ( CAS Before RAS Self refresh ) tCHS -50
-50
-50
-50
ns
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-8-
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E. RD, IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
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