GP1A52LRJ00F View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
GP1A52LRJ00F
Sharp Electronics
'GP1A52LRJ00F' PDF : 12 Pages View PDF
● Parts
This product is assembled using the below parts.
GP1A52LRJ00F
• Photodetector (qty. : 1) [Using a silicon photodiode as light detecting portion, and a bipolar IC as signal processing circuit]
Category
Maximum Sensitivity
wavelength (nm)
Sensitivity
wavelength (nm)
Response time (μs)
Photodiode
900
400 to 1 200
3
• Photo emitter (qty. : 1)
Category
Infrared emitting diode
(non-coherent)
Material
Gallium arsenide (GaAs)
Maximum light emitting
wavelength (nm)
950
• Material
Case
Black NORYL resin
Lead frame plating
Solder dip. (Sn−3Ag−0.5Cu)
I/O Frequency (MHz)
0.3
• Others
Laser generator is not used.
Sheet No.: D3-A04101EN
8
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