GP1S036HEZ View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'GP1S036HEZ' PDF : 4 Pages View PDF
I Electro-optical Characteristics
Parameter
Symbol
Forward voltage
Input
VF
Reverse current
IR
*3 Output Collector dark current
ICEO
Collector current
*3 Coupling *4 Leak current
Characteristics Response time
Rise time
Fall time
IC
ILEAK
tr
tf
Collector-emitter saturation voltage VCE(sat)
*3 Output and coupling characteristics are common to the both phototransistors
*4 Characteristics except leak current is measured at θ=180˚, φ=0˚
Leak current is the output current of transistor when θ=±90˚, φ=0˚ and IC=OFF
Conditions
IF=20mA
VR=3V
VCE=20V
VCE=5V, IF=5mA
VCE=5V, IF=5mA
VCE=5V, IC=100µA
RL=1kΩ
IF=10mA, IC=55µA
GP1S036HEZ
MIN.
−
−
−
55
−
−
−
TYP.
1.2
−
−
−
50
50
−
(Ta=25˚C)
MAX. Unit
1.4
V
10
µA
100 nA
300 µA
17
µA
150 µs
150 µs
0.4
V
I Detecting Angle Characteristics
θ 0˚
30˚
60˚
120˚ 150˚
IC1
OFF
*5
IC2 OFF
*5
ON
210˚
ON
*5
Device state diagram
−
+
φ
−
+
θ
θ
240˚ 300˚ 330˚
IC1
ON
*5
IC2 *5
OFF
❈ Conditions : IF=5mA, VCE=5V, φ=±5˚
*5 Indefinite
360˚
OFF
PT
GL
IC1 : Output current of phototransistors PT1
IC2 : Output current of phototransistors PT2
θ : Device condition : Refer to the figure
φ : Device condition : Refer to the figure
ON :Output current of phototransistors : 55µA or more
OFF : Output current of phototransistors : 17µA or less
❈ Output current of ON/OFF is output when device is at a standstill
Gravity direction
Gravity direction
(Viewing from detecting side)
I Supplement
(Viewing from detecting side)
PT1
PT2
Gravity direction
PT2
PT1
PT1 output
(ON)
PT2 output
(ON)
(ON)
(OFF)
(OFF)
(OFF)
(OFF)
(ON)
(ON)
(ON)
PT : Detecting
PT : Opaque
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