GP1S39J0000F View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
GP1S39J0000F
Sharp Electronics
'GP1S39J0000F' PDF : 11 Pages View PDF
■ Absolute Maximum Ratings
Input
Parameter
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Output Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
∗1Soldering temperature
∗1 For 5s or less
Symbol
IF
VR
P
VCE1O
VCE2O
VE1CO
VE2CO
IC
PC
Ptot
Topr
Tstg
Tsol
Rating
50
6
75
(Ta=25˚C)
Unit
mA
V
mW
35
V
6
V
20
mA
75
mW
100
mW
−25 to +85 ˚C
−40 to +100 ˚C
260
˚C
GP1S39J0000F
Soldering area
■ Electro-optical Characteristics
Parameter
Symbol
Forward voltage
Input
VF
Reverse current
IR
∗2 Output Collector dark current
ICEO
Collector current
∗2 Transfer Collector current ratio
IC
IC1/IC2
charac- Collector-emitter saturation voltage VCE(sat)
teristics
Response time
Rise time tr
Fall time
tf
∗2 Output and Transfer characteristics are common to both phototransistors
Condition
IF=20mA
VR=3V
VCE=20V
VCE=5V, IF=4mA
VCE=5V, IF=4mA
IF=8mA, IC=50μA
VCE=5V, IC=100μA, RL=1kΩ
MIN.
−
−
−
130
0.67
−
−
−
TYP.
1.2
−
−
−
−
−
50
50
(Ta=25˚C)
MAX. Unit
1.4
V
10
μA
100 nA
520 μA
1.5
−
0.4
V
150
μs
150
μs
Sheet No.: D3-A01301EN
4
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