HCS12COREUG View Datasheet(PDF) - Motorola => Freescale
Part Name
Description
MFG CO.
'HCS12COREUG' PDF : 124 Pages View PDF
MC9S12H256 Device User Guide — V01.14
A.3.1.3 Sector Erase
Erasing a 512 byte Flash sector or a 4 byte EEPROM sector takes:
tera ≈ 4000 ⋅ f--N----V----1M-----O----P--
The setup time can be ignored for this operation.
A.3.1.4 Mass Erase
Erasing a NVM block takes:
tmass ≈ 20000 ⋅ f--N----V----1M-----O----P--
The setup time can be ignored for this operation.
Table A-11 NVM Timing Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C
Rating
Symbol Min
Typ
Max
Unit
1 D External Oscillator Clock
fNVMOSC
0.5
32 1
MHz
2 D Bus frequency for Programming or Erase Operations fNVMBUS
1
MHz
3 D Operating Frequency
fNVMOP
150
200
kHz
4 P Single Word Programming Time
tswpgm
46 2
74.5 3
µs
5 D Flash Burst Programming consecutive word 4
tbwpgm
20.4 2
31 3
µs
6 D Flash Burst Programming Time for 32 Words 4
tbrpgm
678.4 2
1035.5 3
µs
7 P Sector Erase Time
tera
20 5
26.7 3
ms
8 P Mass Erase Time
tmass
100 5
133 3
ms
NOTES:
1. Restrictions for oscillator in crystal mode apply!
2. Minimum Programming times are achieved under maximum NVM operating frequency fNVMOP and maximum bus frequency
fbus.
3. Maximum Erase and Programming times are achieved under particular combinations of fNVMOP and bus frequency fbus.
Refer to formulae in Sections A.3.1.1 - A.3.1.4 for guidance.
4. urst Programming operations are not applicable to EEPROM
5. Minimum Erase times are achieved under maximum NVM operating frequency fNVMOP.
A.3.2 NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
98
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