HIN232IP View Datasheet(PDF) - Harris Semiconductor
Part Name
Description
MFG CO.
'HIN232IP' PDF : 14 Pages View PDF
HIN230 thru HIN241
Die Characteristics
DIE DIMENSIONS:
160 mils x 140 mils
METALLIZATION:
Type: Al
Thickness: 10kÅ ±1kÅ
SUBSTRATE POTENTIAL
V+
Metallization Mask Layout
R2IN
T2OUT T1OUT
PASSIVATION:
Type: Nitride over Silox
Nitride Thickness: 8kÅ
Silox Thickness: 7kÅ
TRANSISTOR COUNT:
238
PROCESS:
CMOS Metal Gate
HIN240
T3OUT T4OUT R3IN
R3OUT T5IN
R2OUT
T2IN
T1IN
R1OUT
SHUTDOWN
EN
T5OUT
R4IN
R1IN
GND
VCC
C1+ V+
C1-
C2+
C2-
V-
8-41
R4OUT
T4IN
T3IN
R5OUT
R5IN
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