HM5164165L View Datasheet(PDF) - Hitachi -> Renesas Electronics

Part Name

Description

MFG CO.

HM5164165L

64M EDO DRAM (4-Mword × 16-bit) 8k refresh/4k refresh

Hitachi -> Renesas Electronics 

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HM5164165 Series, HM5165165 Series

DC Characteristics (HM5165165 Series)

HM5165165

-5

-6

Parameter

Symbol Min Max Min Max Unit Test conditions

Operating current*1, *2

Standby current

I CC1

—

140 —

120 mA tRC = min

I CC2

—2

—

2

mA TTL interface

RAS, UCAS, LCAS = VIH

Dout = High-Z

—

0.5 —

0.5 mA CMOS interface

RAS, UCAS,

LCAS V CC – 0.2 V

Dout = High-Z

Standby current

(L-version)

I CC2

—

150 —

150 µA CMOS interface

RAS, UCAS,

LCAS V CC – 0.2 V

Dout = High-Z

RAS-only refresh current*2

I CC3

Standby current*1

I CC5

—

140 —

120 mA tRC = min

—5

—

5

mA RAS = VIH

UCAS, LCAS = VIL

Dout = enable

CAS-before-RAS refresh

current

I CC6

—

140 —

120 mA tRC = min

EDO page mode current*1, *3 ICC7

—

120 —

110 mA RAS = VIL , CAS cycle,

tHPC = tHPC min

Battery backup current*4

I CC10

—

500 —

500 µA CMOS interface

(Standby with CBR refresh)

Dout = High-Z

(L-version)

CBR refresh: tRC = 31.3 µs

tRAS 0.3 µs

Self refresh mode current

(L-version)

I CC11

—

400 —

400 µA CMOS interface

RAS, UCAS, LCAS 0.2 V

Dout = High-Z

Input leakage current

Output leakage current

I LI

–5 5

–5 5

µA 0 V Vin VCC + 0.3 V

I LO

–5 5

–5 5

µA 0 V Vout V CC

Dout = disable

Output high voltage

VOH

2.4

VCC

2.4

VCC

V

High Iout = –2 mA

Output low voltage

VOL

0

0.4 0

0.4 V Low Iout = 2 mA

Notes: 1. ICC depends on output load condition when the device is selected. ICC max is specified at the output

open condition.

2. Address can be changed once or less while RAS = VIL.

3. Measured with one sequential address change per EDO cycle, tHPC.

4. VIH V CC – 0.2 V, 0 V VIL 0.2 V.

10

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