HMPSA27 View Datasheet(PDF) - Hi-Sincerity Microelectronics
Part Name
Description
MFG CO.
'HMPSA27' PDF : 3 Pages View PDF
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6332
Issued Date : 1995.05.18
Revised Date : 2002.04.11
Page No. : 1/3
HMPSA27
NPN SILICON TRANSISTOR
Description
The HMPSA27 is designed for darlington amplifier high current gain
collector current to 500mA.
Absolute Maximum Ratings
TO-92
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ......................................................................................... 60 V
VCES Collector to Emitter Voltage ...................................................................................... 60 V
VEBO Collector to Emitter Voltage ...................................................................................... 10 V
IC Collector Current........................................................................................................ 500 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
60
-
BVCES
60
-
BVEBO
10
-
ICBO
-
-
IEBO
-
-
ICES
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE1
10K
-
*hFE2
10K
-
Max.
-
-
-
100
100
500
1.5
2
-
-
Unit
Test Conditions
V
IC=100uA, IE=0
V
IC=100uA, VBE=0
V
IE=10uA, IC=0
nA VCB=50V, IE=0
nA VEB=10V, IC=0
nA VCE=50V
V
IC=100mA, IB=0.1mA
V
VCE=5V, IC=100mA
VCE=5V, IC=10mA
VCE=5V, IC=100mA
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HMPSA27
HSMC Product Specification
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