HSMP-381C-TR2G View Datasheet(PDF) - Avago Technologies
Part Name
Description
MFG CO.
'HSMP-381C-TR2G' PDF : 9 Pages View PDF
Typical Parameters at T = 25°C
C
Part Number
HSMP-
381x
Test Conditions
Series Resistance
RS (Ω)
53
I = 1 mA
F
f = 100 MHz
Carrier Lifetime
W (ns)
1500
I = 50 mA
F
I = 250 mA
R
Reverse Recovery Time
Trr (ns)
300
V = 10 V
R
I = 20 mA
F
90% Recovery
Total
Capacitance
CT (pF)
0.27 @ 50 V
f = 1 MHz
Typical Parameters at T = 25°C (unless otherwise noted), Single Diode
C
0.45
0.40
0.35
1 MHz
0.30
10000
1000
100
TA = +85 C
TA = +25 C
TA = –55 C
0.25
30 MHz
0.20
frequency>100 MHz
0.15
0 2 4 6 8 10 12 14 16 18 20
REVERSE VOLTAGE (V)
Figure 1. RF Capacitance vs. Reverse
Bias.
10
1
0.01
0.1
1
10
100
IF – FORWARD BIAS CURRENT (mA)
Figure 2. RF Resistance vs. Forward
Bias Current, f = 100MHz
120
Diode Mounted as a
110 Series Attenuator
in a 50 Ohm Microstrip
100 and Tested at 123 MHz
90
80
70
60
50
40
1000
100
10
DIODE RF RESISTANCE (OHMS)
Figure 3. 2nd Harmonic Input
Intercept Point vs. Diode RF
Resistance.
100
Typical Applications for Multiple Diode Products
VARIABLE BIAS
10
1
0.1
INPUT
0.01
0
125 C 25 C –50 C
0.2 0.4 0.6 0.8 1.0 1.2
VF – FORWARD VOLTAGE (mA)
Figure 4. Forward Current vs. Forward
Voltage.
FIXED
BIAS
VOLTAGE
RF IN/OUT
Figure 5. Four Diode π Attenuator. See Application Note 1048
for Details.
Notes:
3. Typical values were derived using limited samples during initial product characterization and may not be representative of the overall distribution.
3
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