HT9170D View Datasheet(PDF) - Holtek Semiconductor
Part Name
Description
MFG CO.
'HT9170D' PDF : 13 Pages View PDF
Approximate internal connection circuits
O P E R A T IO N A L
A M P L IF IE R
VN
V-
VP
VO+ P A
GS
VREF
O PA
O S C IL L A T O R
X1
X2
20pF
10M
10pF
CM OS OUT
C M O S IN /O U T
C M O S IN
P u ll- lo w
HT9170B/HT9170D
C M O S IN
P u ll- h ig h
CM OS OUT
T r is ta te
EN
Absolute Maximum Ratings
Supply Voltage ............................................-0.3V to 6V
Input Voltage..............................VSS-0.3V to VDD+0.3V
Storage Temperature ............................-50°C to 125°C
Operating Temperature...........................-20°C to 75°C
Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may
cause substantial damage to the device. Functional operation of this device at other conditions beyond those
listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliabil-
ity.
D.C. Characteristics
Ta=25°C
Symbol
Parameter
VDD Operating Voltage
IDD
Operating Current
ISTB
Standby Current
VIL
²Low² Input Voltage
VIH
²High² Input Voltage
IIL
²Low² Input Current
IIH
²High² Input Current
ROE Pull-high Resistance (OE)
RIN
Input Impedance (VN, VP)
IOH
Source Current (D0~D3, EST, DV)
IOL
Sink Current (D0~D3, EST, DV)
fOSC System Frequency
Test Conditions
VDD
Conditions
¾
¾
5V
¾
5V PWDN=5V
5V
¾
5V
¾
5V VVP=VVN=0V
5V VVP=VVN=5V
5V VOE=0V
5V
¾
5V VOUT =4.5V
5V VOUT =0.5V
5V Crystal=3.5795MHz
Min. Typ. Max.
2.5
5
5.5
¾
3.0
7
¾
10
25
¾
¾
1.0
4.0
¾
¾
¾
¾
0.1
¾
¾
0.1
60
100 150
¾
10
¾
-0.4 -0.8
¾
1.0
2.5
¾
3.5759 3.5795 3.5831
Unit
V
mA
mA
V
V
mA
mA
kW
MW
mA
mA
MHz
Rev. 1.11
3
February 23, 2009
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