HWL23NPB
L-Band GaAS Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power
@ f=0.9GHz, Vds=5V
Po (dBm)
PAE (%)
25
60
20
15
Gain
10
5
50
40
Po
Gain
30
Eff
20
10
0
0
-8
-4
0
4
8
12 Pin (dBm)
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=5V
Po (dBm)
PAE (%)
40
70
30
20
Gain
10
60
50
Po
40
Gain
Eff
30
20
10
0
0
-8
-4
0
4
8
12
16 Pin (dBm)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.