HWL26NC View Datasheet(PDF) - Hexawave, Inc
Part Name
Description
MFG CO.
'HWL26NC' PDF : 2 Pages View PDF
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2
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Features
• Low Cost GaAs Power FET
• Class A or Class AB Operation
• 17 dB Typical Gain at 2.4 GHz
• 5V to 10V Operation
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376
HWL26NC
March 2004 V2
Outline Dimensions
451.5
1
Description
226
The HWL26NC is a medium power GaAs FET
designed for various L-band & S-band applications.
76
Absolute Maximum Ratings
VDS Drain to Source
+15V
0
Voltage
VGS
ID
IG
TCH
TSTG
PT*
Gate to Source Voltage -5V
Drain Current
IDSS
Gate Current
1 mA
Channel Temperature 175°C
Storage Temperature -65 to +175°C
Power Dissipation
1.7 W
* mounted on an infinite heat sink
2
4
226.0
3
0.0 75.5
275
440 524
Units: µm
Thickness: 50 ±5
Chip size ±50
Bond Pad 1, 3 (Source): 100 x 100
Bond Pad 2 (Gate): 100 x 100
Bond Pad 4 (Drain): 100 x 100
Electrical Specifications (TA=25°C) f = 2.4 GHz for all RF Tests
Symbol
IDSS
VP
gm
P1dB
G1dB
PAE
Parameters & Conditions
Saturated Current at VDS=3V, VGS=0V
Pinch-off Voltage at VDS=3V, ID=10 mA
Transconductance at VDS=3V, ID=100 mA
Power Output at Test Points
VDS=10V, ID=0.5 IDSS
Gain at 1dB Compression Point
VDS=10V, ID=0.5 IDSS
Power-Added Efficiency (POUT = P1dB)
VDS=10V, ID=0.5 IDSS
Units
mA
V
mS
dBm
dB
%
Min.
150
-3.5
-
25
15
30
Typ.
200
-2.0
120
26
16
40
Max.
280
-1.5
-
-
-
-
Hexawave Inc. 2 Prosperity Road II, Science-Based Industrial Park, Hsinchu, Taiwan. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw All specifications are subject to change without notice.
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