HWL26NPB View Datasheet(PDF) - Hexawave, Inc
Part Name
Description
MFG CO.
'HWL26NPB' PDF : 7 Pages View PDF
Features
• Plastic Packaged GaAs Power FET
• Suitable for Commercial Wireless
Applications
• High Efficiency
• 3V to 6V Operation
Description
The HWL26NPB is a medium Power GaAs FET
using surface mount type plastic package for
various L-Band applications. It is suitable for
various 900 MHz, 1900 MHz cellular/wireless
applications.
HWL26NPB
L-Band GaAs Power FET
Autumn 2002 V1
Outline Dimensions
1
2
3
Pin 1: Source
Pin 2: Gate
Pin 3: Drain
Absolute Maximum Ratings
VDS Drain to Source Voltage
+7V
VGS Gate to Source Voltage
-5V
ID Drain Current
IG Gate Current
IDSS
1mA
TCH Channel Temperature
150°C
TSTG Storage Temperature
-65 to +150°C
PT Power Dissipation
0.7 W
PB Package (SOT-23)
Electrical Specifications (TA=25°C) f=1900 MHz for all RF Tests
Symbol
IDSS
VP
gm
Rth
P1dB
G1dB
PAE
Parameters & Conditions
Saturated Current at VDS=5V, VGS=0V
Pinch-off Voltage at VDS=5V, ID=11mA
Transconductance at VDS=5V, ID=110mA
Thermal Resistance
Power Output at Test Points
VDS=3V, ID=0.5IDSS
VDS=5V, ID=0.5IDSS
Gain at 1dB Compression Point
VDS=3V, ID=0.5IDSS
VDS=5V, ID=0.5IDSS
Power-Added Efficiency (POUT = P1dB)
VDS=3V, ID=0.5IDSS
VDS=5V, ID=0.5IDSS
Units
mA
V
mS
°C/W
dBm
dB
%
Min.
150
-3.5
-
-
21.0
23.0
9.0
10.0
Typ.
220
-2.0
120
100
21.5
24.5
10.0
11.0
40.0
45.0
Max.
-
-1.5
-
-
-
-
-
-
-
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
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