HWL26YC View Datasheet(PDF) - Hexawave, Inc
Part Name
Description
MFG CO.
'HWL26YC' PDF : 2 Pages View PDF
1
2
Features
• Low Cost GaAs Power FET
• Class A or Class AB Operation
• 18 dB Typical Gain at 2.4 GHz
376
• 5V to 10V Operation
Description
226
The HWL26YC is a medium power GaAs FET
designed for various L-band & S-band applications.
HWL26YC
L-Band Power FET Via Hole Chip
Autumn 2002 V1
Outline Dimensions
451.5
1
2
4
226.0
Absolute Maximum Ratings
VDS
VGS
ID
IG
TCH
TSTG
PT*
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
* mounted on an infinite heat sink
+15V
-5V
IDSS
1mA
175°C
-65 to +175°C
1.7W
76
0
3
0.0 75.5
275
440 524
Units: µm
Thickness: 50 ±5
Chip size ±50
Bond Pad 1, 3 (Source): 100 x 100
Bond Pad 2 (Gate): 100 x 100
Bond Pad 4 (Drain): 100 x 100
Electrical Specifications (TA=25°C) f = 2.4 GHz for all RF Tests
Symbol
Parameters & Conditions
Units
Min.
Typ.
Max.
IDSS
Saturated Current at VDS=3V, VGS=0V
mA
150
200
280
VP
Pinch-off Voltage at VDS=3V, ID=10mA
V
-3.5
-2.0
-1.5
gm
Transconductance at VDS=3V, ID=100mA
mS
-
120
-
P1dB
G1dB
PAE
Power Output at Test Points
VDS=10V, ID=0.5 IDSS
Gain at 1dB Compression Point
VDS=10V, ID=0.5 IDSS
Power-Added Efficiency (POUT = P1dB)
VDS=10V, ID=0.5 IDSS
dBm
25
26
-
dB
16
17
-
%
35
42
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
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