HWL30YRF View Datasheet(PDF) - Hexawave, Inc
Part Name
Description
MFG CO.
'HWL30YRF' PDF : 4 Pages View PDF
HWL30YRF
L-Band GaAs Power FET
Typical Performance at 25°C
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power
@ f=1.9GHz, Vds=10.0V, Ids= 0.5 Idss
Po (dBm)
40
PAE (%)
60
30
20
Gain
10
50
Po
40
Gain
30
Eff
20
10
0
0
0 2 4 6 8 10 12 14 16 18 20 22 Pin (dBm)
Output Power & Efficiency & Gain vs Input Power
@ f=2.4GHz, Vds=10.0V, Ids= 0.5 Idss
Po (dBm)
40
30
20
Gain
10
0
0
PAE (%)
60
50
Po
40
Gain
30
Eff
20
10
0
5
10
15
20
Pin (dBm)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
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