HWL36YRA View Datasheet(PDF) - Hexawave, Inc
Part Name
Description
MFG CO.
'HWL36YRA' PDF : 4 Pages View PDF
Typical Performance at 25°C
HWL36YRA
L-Band GaAs Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power
@ f=1.9 GHz, Vds=10V, Ids = 0.5 Idss
Po (dBm)
40
35
30
25
20
15
Gain
10
5
0
0
4
PAE (%)
40
30
Po
Gain
20
Eff
10
0
8
12
16
20
24 Pin (dBm)
Output Power & Efficiency & Gain vs Input Power
@ f=2.4 GHz, Vds=10V, Ids = 0.5 Idss
Po (dBm)
40
PAE (%)
70
35
30
25
20
15
Gain
10
5
60
50
Po
40
Gain
30
Eff
20
10
0
0
4
8
12
16
20
24
28 Pin (dBm)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
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