HWL36YRF View Datasheet(PDF) - Hexawave, Inc
Part Name
Description
MFG CO.
'HWL36YRF' PDF : 3 Pages View PDF
Features
• Low Cost GaAs Power FET
• Class A or Class AB Operation
• Typical 13 dB Gain
• 5V to 10V Operation
Description
The HWL36YRF is a Power GaAs FET designed
for various L-band & S-band applications. It is
presently offered in low cost ceramic package.
Absolute Maximum Ratings
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID Drain Current
IG Gate Current
TCH Channel Temperature
TSTG Storage Temperature
PT* Power Dissipation
* mounted on an infinite heat sink.
+15V
-5V
IDSS
10mA
175°C
-65 to +175°C
15W
HWL36YRF
L-Band GaAs Power FET
Autumn 2002 V1
Outline Dimensions
RF Package (Ceramic)
Electrical Specifications (TA=25°C) f = 2400 MHz for all RF Tests
Symbol
Parameters & Conditions
IDSS
Saturated Current at VDS=5V, VGS=0V
VP
Pinch-off Voltage at VDS=5V, ID=100mA
gm
Transconductance at VDS=5V, ID=1000mA
Rth
Thermal Resistance, Channel to case*
P1dB
Power Output at Test Points
VDS=10V, ID=0.5IDSS
G1dB
Gain at 1dB Compression Point
VDS=10V, ID=0.5IDSS
PAE
Power-Added Efficiency (Pout = P1dB)
VDS=10V, ID=0.5IDSS
* Device mounted on an infinite heat sink.
Typical Performance at 25°C
Units
mA
V
mS
°C/W
dBm
dB
%
Min.
1700
-3.5
-
-
35
12
35
Typ.
2000
-2.0
1000
7
36
13
42
Max.
2600
-1.5
-
10
-
-
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.
Share Link: 
