IDT71024S15TYG8 View Datasheet(PDF) - Integrated Device Technology
Part Name
Description
MFG CO.
'IDT71024S15TYG8' PDF : 8 Pages View PDF
IDT71024 CMOS Static RAM
1 Meg (128K x 8-Bit)
Commercial and Industrial Temperature Ranges
AC Electrical Characteristics
(VCC = 5.0V ± 10%, Commercial and Industrial Temperature Ranges)
71024S12
71024S15
71024S20
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Read Cycle
tRC
Read Cycle Time
12
—
15
—
20
—
ns
tAA
Address Access Time
—
12
—
15
—
20
ns
tACS
tCLZ(1)
tCHZ(1)
Chip Select Access Time
Chip Sele ct to Output in Low-Z
Chip Desele ct to Output in High-Z
—
12
—
15
—
20
ns
3
—
3
—
3
—
ns
0
6
0
7
0
8
ns
tOE
tOLZ(1)
tOHZ(1)
Output Enable to Output Valid
Output Enab le to Output in Low-Z
Output Disab le to Output in High-Z
—
6
—
7
—
8
ns
0
—
0
—
0
—
ns
0
5
0
5
0
7
ns
tOH
Output Hold from Address Change
tPU(1)
Chip Select to Power-Up Time
tPD(1)
Chip Deselect to Power-Down Time
4
—
4
—
4
—
ns
0
—
0
—
0
—
ns
—
12
—
15
—
20
ns
Write Cycle
tWC
Write Cycle Time
12
—
15
—
20
—
ns
tAW
Address Valid to End-of-Write
10
—
12
—
15
—
ns
tCW
Chip Select to End-of-Write
10
—
12
—
15
—
ns
tAS
Address Set-Up Time
0
—
0
—
0
—
ns
tWP
Write Pulse Width
8
—
12
—
15
—
ns
tWR
Write Recovery Time
0
—
0
—
0
—
ns
tDW
Data Valid to End-of-Write
7
—
8
—
9
—
ns
tDH
tOW(1)
tWHZ(1)
Data Hold Time
Output Active from End-of-Write
Write Enab le to Output in High-Z
0
—
0
—
0
—
ns
3
—
3
—
4
—
ns
0
5
0
5
0
8
ns
NOTE:
1. This parameter guaranteed with the AC load (Figure 2) by device characterization, but is not production tested.
2964 tbl 09
6.442
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