IFD-53110 View Datasheet(PDF) - HP => Agilent Technologies

Part Name

Description

MFG CO.

IFD-53110

Silicon Bipolar MMIC 3.5 and 5.5 GHz Divide-by-4 Static Prescalers

HP => Agilent Technologies 

1 2 3 4 5

Absolute Maximum Ratings

Symbol

Vcc - Vee

Pdiss

P in

Tj

TSTG

Parameter

Device Voltage

Power Dissipation[2,3]

RF Input Power

Junction Temperature

Storage Temperature

Units

V

mW

dBm

°C

°C

Absolute Maximum[1]

8

650

+15

200

-65 to +200

Thermal Resistance[2]: θjc = 107°C/W

Notes:

1, Operation of this device above any one of these parameters may cause permanent damage.

2. Tcase = 25°C.

3. Derate at 9.3 mW/°C for TC ≥ 130°C.

Guaranteed Electrical Specifications, IFD-53010 and IFD-53110

TA = 25°C, ZO = 50 Ω, Vcc - Vee = 5.0 V

Symbol

FMAX

FMAX

ICC

Parameters and Test Conditions

IFD-53010:

Maximum Clock Frequency

Pin = -10 dBm (200 mVpp)

IFD-53110:

Maximum Clock Frequency

Pin = -10 dBm (200 mVpp)

IFD-53010 and IFD-53110: Supply Current

Units

GHz

GHz

mA

Min. Typ. Max.

5.5 6.0

3.5 5.0

35 43 50

Typical Design Information, TA = 25°C, Z0 = 50 Ω, Vcc - Vee = 5.0 V, Pin = -10 dBm.

All values apply to both IFD-53010 and IFD-53110. ftest is 5 GHz for IFD-53010 and 3 GHz for IFD-53110 (unless

otherwise noted).

Symbol

Parameters and Test Conditions

Units Value

F MIN

Pin

Minimum Clock Frequency[1]

Input Sensitivity

MHz

150

f = ftest dBm

-22

mVpp

50

Pout

Output Power

f = 0.15 to ftest dBm

-5

mVpp 355

VSWR

PN

Input VSWR

Output VSWR

SSB Phase Noise

f = 0.15 to ftest

f = 0.15 to ftest

f = 3 GHz, 1 kHz offset

f = 5 GHz, 1 kHz offset (IFD-53010 only)

dBc/Hz

2.0:1

2.5:1

-143

-138

Tr

Output Rise Time, 20% - 80%

Tf

Output Fall Time, 20% - 80%

f = ftest psec

145

f = ftest psec

85

Note:

1. Minimum clock frequency when driven from a sinusoidal input. Operation to lower frequencies is possible when using input signals

with faster rise times, such as occurs in the case of a cascade of two or more IFDs.

7-152

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