IRF1010EPBF View Datasheet(PDF) - Unspecified

Part Name

Description

MFG CO.

IRF1010EPBF

HEXFET®Power MOSFET

Unspecified 

1 2 3 4 5 6 7 8

IRF1010EPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

∆V(BR)DSS/∆TJ

RDS(on)

VGS(th)

gfs

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

LD

Internal Drain Inductance

LS

Internal Source Inductance

Ciss

Coss

Crss

EAS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Single Pulse Avalanche Energy‚

Min. Typ. Max. Units

Conditions

60 ––– ––– V VGS = 0V, ID = 250µA

––– 0.064 ––– V/°C Reference to 25°C, ID = 1mA

––– ––– 12 mΩ VGS = 10V, ID = 50A „

2.0 ––– 4.0 V VDS = VGS, ID = 250µA

69 ––– ––– S VDS = 25V, ID = 50A„

––– ––– 25 µA VDS = 60V, VGS = 0V

––– ––– 250

VDS = 48V, VGS = 0V, TJ = 150°C

––– ––– 100 nA VGS = 20V

––– ––– -100

VGS = -20V

––– ––– 130

ID = 50A

––– ––– 28 nC VDS = 48V

––– ––– 44

VGS = 10V, See Fig. 6 and 13

––– 12 –––

VDD = 30V

––– 78 ––– ns ID = 50A

––– 48 –––

RG = 3.6Ω

––– 53 –––

VGS = 10V, See Fig. 10 „

Between lead,

D

––– 4.5 –––

6mm (0.25in.)

nH from package

G

––– 7.5 –––

and center of die contact

S

––– 3210 –––

VGS = 0V

––– 690 –––

VDS = 25V

––– 140 ––– pF ƒ = 1.0MHz, See Fig. 5

––– 1180…320† mJ IAS = 50A, L = 260µH

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 84‡ A showing the

integral reverse

G

––– ––– 330

p-n junction diode.

S

––– ––– 1.3 V TJ = 25°C, IS = 50A, VGS = 0V „

––– 73 110 ns TJ = 25°C, IF = 50A

––– 220 330 nC di/dt = 100A/µs „

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

„ Pulse width ≤ 400µs; duty cycle ≤ 2%.

max. junction temperature. (See fig. 11)

… This is a typical value at device destruction and represents

‚ Starting TJ = 25°C, L = 260µH

RG = 25Ω, IAS = 50A, VGS =10V (See Figure 12)

operation outside rated limits.

† This is a calculated value limited to TJ = 175°C .

ƒ ISD ≤ 50A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

‡ Calculated continuous current based on maximum allowable

junction temperature. Package limitation current is 75A.

2

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