IS62C1024AL View Datasheet(PDF) - Integrated Silicon Solution

Part Name

Description

MFG CO.

IS62C1024AL

128K x 8 LOW POWER CMOS STATIC RAM

Integrated Silicon Solution 

1 2 3 4 5 6 7 8 9 10

IS62C1024AL

IS65C1024AL

DATA RETENTION SWITCHING CHARACTERISTICS

Symbol

Vdr

Idr

tsdr

trdr

Parameter

Vdd for Data Retention

Data Retention Current

Data Retention Setup Time

Recovery Time

Test Condition

See Data Retention Waveform

Vdd = 2.0V, CE1 ≥ Vdd – 0.2V

or CE2 ≤ 0.2V

Vin ≥ Vdd – 0.2V, or Vin ≤ Vss + 0.2V

See Data Retention Waveform

See Data Retention Waveform

Note:

1. Typical Values are measured at Vdd = 5V, Ta = 25oC and not 100% tested.

Com.

Ind.

Auto.

DATA RETENTION WAVEFORM (CE1 Controlled)

VDD

4.5V

tSDR

Data Retention Mode

2.2V

VDR

CE1

GND

CE1 ≥ VDD - 0.2V

DATA RETENTION WAVEFORM (CE2 Controlled)

Data Retention Mode

VDD

4.5V

CE2

2.2V

VDR

0.4V

GND

tSDR

CE2 ≤ 0.2V

Min. Typ. Max. Unit

2.0

5.5 V

——

5 µA

—

—

10

—

—

45

0

— ns

trc

— ns

tRDR

tRDR

8

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. H

06/26/08

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